Samsung Electronics has unveiled what its claims to be the world's first 30nm 64Gb multi level cell NAND Flash memory chip, in which up to 16 of these cells can be combined to make a 128GB memory card. This cell also marks the 8th consecutive year where the flash memory density has doubled over the previous year and also the 7th consecutive year of improving the nanometer scale, which started off at 100nm 1Gb NAND back in 2001.
Samsung has developed this device using its new SaDPT manufacturing process. This new process along with its CTF technology-based NAND Flash expect to improve cost efficiency for its next-generation nanometer scale designs, which should result in further lower Flash product pricing.
Further technical information on this new Flash device can be found in this Tech-On article.
