Samsung Electronics announced that it has become the first to begin mass producing 16 gigabit (Gb) NAND flash, the highest capacity memory chip now available. The company said it will fabricate the devices in 51 nanometers (nm), the finest process technology to be used in memory mass production to date.
Samsung’s 51nm NAND flash chips can be produced 60 percent more efficiently than those produced with 60nm process technology. Samsung achieved this new migration milestone just eight months after announcing production of its 60nm 8Gb NAND flash last August.
The new 16Gb chip which has a multi-level cell (MLC) structure can facilitate capacity expansion by offering 16 gigabytes (GBs) of memory in a single memory card. Furthermore, by applying the new process technology, Samsung has accelerated the chip’s read and write speeds by approximately 80 percent over current MLC data processing speeds.
| NAND Flash | New MLC (51nm) | Current MLC (60nm) | SLC (60nm) |
| Read speed | 30MB/s | 17MB/s | 33MB/s |
| Write speed | 8MB/s | 4.4MB/s | 13MB/s |
NAND flash memory reads and writes data in units called “pages.” The 60nm NAND flash memory is designed with a 2 KiloByte (KB) page size, but the 51nm 16Gb version can process data in 4 KB pages, nearly doubling the data rate. The product also maintains the same 4 bit error-correcting code (ECC) capability as that of 60nm NAND, allowing customers to use existing system interfaces with only minor firmware upgrades. With its 4 bit ECC, Samsung eliminates the need to secure a better ECC capability to assure sufficient reliability, which would have required new costly controllers.
The complete press release can be found here.
